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 Fast Recovery Epitaxial Diode (FRED)
DSEI 30 IFAVM = 30 A
VRRM = 1000 V = 35 ns trr
C
VRSM V 1000
VRRM V 1000
Type
A
TO-247 AD
DSEI 30-10A
C A C
Symbol I FRMS I FAVM I FRM I FSM
Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 A A A A A A A A2s A2s As A2s C C C W Nm/lb.in. Nm/lb.in. g
2
A = Anode, C = Cathode
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i2 dt TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features
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TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque with screw M3 Mounting torque with screw M3.5
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International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meet UL 94V-0
138 0.45/4 0.55/5 6
Applications
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Symbol
Test Conditions
Characteristic Values typ. max. 750 250 7 2 2.4 1.5 12.5 0.9 0.25 35 A A mA V V V m K/W K/W K/W ns A
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IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 30 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
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VF VT0 rT RthJC RthCK RthJA t rr I RM
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
For power-loss calculations only TVJ = TVJM
Advantages
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IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 540 V; IF = 30 A; -diF/dt = 240 A/s L 0.05 H; TVJ = 100C
35 16
50 18
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High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to DIN/IEC 747 IXYS reserves the right to change limits, test conditions and dimensions
93021B
(c) 1997 IXYS All rights reserved
21
DSEI 30, 1000 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF /dt.
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus -diF/dt.
Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Dimensions
Fig. 7 Transient thermal impedance junction to case.
22
(c) 1997 IXYS All rights reserved


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